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UPC2709T, UPC2712T
2.5 GHz SILICON MMIC
WIDE-BAND AMPLIFIER
FEATURES
? WIDE FREQUENCY RESPONSE: 2.5 GHz
? HIGH GAIN: 23 dB (UPC2709T)
? SATURATED OUTPUT POWER:
+11.5 dBm (UPC2709T)
? INTERNAL CURRENT REGULATION MINIMIZES GAIN
CHANGE OVER TEMPERATURE
? 5 V SINGLE SUPPLY VOLTAGE
? SUPER SMALL PACKAGE
30
25
20
GAIN vs. FREQUENCY
UPC2709
UPC2712
? TAPE AND REEL PACKAGING OPTION AVAILABLE
15
DESCRIPTION
10
NEC's UPC2709T and UPC2712T are Silicon Monolithic inte-
grated circuits manufactured using the NESAT III process.
These devices are suitable as buffer amplifiers for wide-band
0
0.5
1.0 1.5 2.0
Frequency, f (GHz)
2.5
3.0
applications. They are designed for low cost gain stages in
cellular radios, GPS receivers, DBS tuners, PCN, and test/
measurement equipment.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
ELECTRICAL CHARACTERISTICS (T A = 25 ° C, f = 1 GHz, V CC = 5
V)
PART NUMBER
PACKAGE OUTLINE
UPC2709T
T06
UPC2712T
T06
SYMBOLS
I CC
G S
PARAMETERS AND CONDITIONS
Circuit Current (no signal)
Small Signal Gain
UNITS
mA
dB
MIN
19
21
TYP
25
23
MAX
32
26.5
MIN
9
18
TYP
12
20
MAX
15
23.5
f U
Upper Limit Operating Frequency
? G S
(The gain at f U is 3 dB down from the gain at 0.1 GHz)
Gain Flatness, f = 0.1 ~ 1.8 GHz
f = 0.1 ~ 2.0 GHz
GHz
dB
2.0
2.3
± 1.0
2.2
2.6
± 0.8
P SAT
P 1dB
Saturated Output Power
Output Power at 1 dB Compression Point
dBm
dBm
9
11.5
7.5
0
3
-2.5
NF
Noise Figure
dB
5
6.5
4.5
6
RL IN
RL OUT
ISOL
? G T
R TH
Input Return Loss
Output Return Loss
Isolation
Gain -Temperature Coefficient
Thermal Resistance (Junction to Ambient)
dB
dB
dB
dB/ ° C
° C/W
7
7
26
10
10
31
-0.002
200
9
10
28
12
13
33
-0.003
200
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 28, 2005
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